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Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W


Quantity:  piece  
Product information

Item number:
     4MD6L-IXTP1R4N100P
Manufacturer:
     IXYS
Manufacturer no.:
     IXTP1R4N100P
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: IXYS
Mounting: THT
Case: TO220AB
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1.4A
On-state resistance: 11.8Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 17.8nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
Other search terms: Transistors
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€ 3.55*
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