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Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W


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Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Item number:
     4MD6L-IXTH2R4N120P
Manufacturer:
     IXYS
Manufacturer no.:
     IXTH2R4N120P
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: IXYS
Mounting: THT
Case: TO247-3
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Other search terms: Transistors, power transistor
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