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Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A


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Product information

Item number:
     4MD6L-IXTA130N10T
Manufacturer:
     IXYS
Manufacturer no.:
     IXTA130N10T
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: IXYS
Mounting: SMD
Case: TO263
Reverse recovery time: 77ns
Drain-source voltage: 100V
Drain current: 130A
On-state resistance: 9.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: TrenchMV™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Other search terms: SMD transistors, Transistor, Transistors
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