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Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™


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Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Item number:
     4MD6L-IXBX75N170A
Manufacturer:
     IXYS
Manufacturer no.:
     IXBX75N170A
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: IXYS
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 65A
Pulsed collector current: 300A
Turn-on time: 65ns
Turn-off time: 595ns
Type of transistor: IGBT
Power dissipation: 1.04kW
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 358nC
Technology: BiMOSFET™
Other search terms: power transistor
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€ 74.62
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€ 66.21
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