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Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268


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Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Item number:
     4MD6L-IXBT42N170A
Manufacturer:
     IXYS
Manufacturer no.:
     IXBT42N170A
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
Manufacturer: IXYS
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 265A
Turn-on time: 33ns
Turn-off time: 308ns
Type of transistor: IGBT
Power dissipation: 357W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 188nC
Technology: BiMOSFET™
Other search terms: Transistor, Transistors, smd transistor
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