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Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264


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Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Item number:
     4MD6L-IXBK75N170
Manufacturer:
     IXYS
Manufacturer no.:
     IXBK75N170
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: IXYS
Mounting: THT
Case: TO264
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 580A
Turn-on time: 277ns
Turn-off time: 840ns
Type of transistor: IGBT
Power dissipation: 1.04kW
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.35µC
Technology: BiMOSFET™
Other search terms: power transistor
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