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Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB


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Product information
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Item number:
     4MD6L-IRLZ34NPBF
Manufacturer:
     Infineon
Manufacturer no.:
     IRLZ34NPBF
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power MOSFET
Power transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: THT
Case: TO220AB
Drain-source voltage: 55V
Drain current: 27A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 56W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
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785
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