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Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4


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Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Transistor: P-MOSFET; unipolar; -100V; -0.49A; 1.3W; DIP4
Item number:
     4MD6L-IRFD9110PBF
Manufacturer:
     Vishay
Manufacturer no.:
     IRFD9110PBF
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: THT
Case: DIP4
Drain-source voltage: -100V
Drain current: -0.49A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
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