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Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W


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Product information

Item number:
     4MD6L-IPD50P04P4L11ATMA2
Manufacturer:
     Infineon
Manufacturer no.:
     IPD50P04P4L11ATMA2
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-TO252-3-313
Drain-source voltage: -40V
Drain current: -40A
On-state resistance: 10.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Gate charge: 14nC
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: -16...5V
Pulsed drain current: -200A
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€ 1.89*
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