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Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W


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Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Item number:
     4MD6L-IPB100N04S303
Manufacturer:
     Infineon
Manufacturer no.:
     IPB100N04S303ATMA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 110nC
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
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