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Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3


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Product information

Item number:
     4MD6L-IPB037N06N3GATMA1
Manufacturer:
     Infineon
Manufacturer no.:
     IPB037N06N3GATMA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Other search terms: SMD transistors, Transistor, Transistors
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