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Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7


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Product information

Item number:
     4MD6L-IPB027N10N3GATMA1
Manufacturer:
     Infineon
Manufacturer no.:
     IPB027N10N3GATMA1
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-TO263-7
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
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€ 4.94*
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