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Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W


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Product information

Item number:
     4MD6L-IMZA65R027M1HXKSA1
Manufacturer:
     Infineon
Manufacturer no.:
     IMZA65R027M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC;CoolSiC™
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Other search terms: Transistors, power transistor
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