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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W


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Product information

Item number:
     4MD6L-IMZ120R090M1HXKSA1
Manufacturer:
     Infineon
Manufacturer no.:
     IMZ120R090M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC;CoolSiC™
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
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