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Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W


Quantity:  piece  
Product information

Item number:
     4MD6L-IMW65R048M1HXKSA1
Manufacturer:
     Infineon
Manufacturer no.:
     IMW65R048M1HXKSA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: THT
Case: TO247
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: SiC;CoolSiC™
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 100A
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from € 12.66*
  
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