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Transistor: IGBT; 650V; 60.5A; 137W; TO247-3


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Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Item number:
     4MD6L-IKW50N65ES5XKSA1
Manufacturer:
     Infineon
Manufacturer no.:
     IKW50N65ES5XKSA1
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60.5A
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 137W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Technology: TRENCHSTOP™ 5
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