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Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A


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Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Item number:
     4MD6L-IGT60R190D1SATMA1
Manufacturer:
     Infineon
Manufacturer no.:
     IGT60R190D1SATMA1
EAN/GTIN:
     n/a
Search terms:
Junction FET transistor
Power transistor
MOSFET
MOSFET transistor
Attention!
This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity.

Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-HSOF-8-3
Gate current: 7.7mA
Drain-source voltage: 600V
Drain current: 12.5A
On-state resistance: 0.19Ω
Type of transistor: N-JFET
Power dissipation: 55.5W
Polarisation: unipolar
Kind of package: tape
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhanced
Gate-source voltage: -10V
Pulsed drain current: 23A
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from € 7.94*
  
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€ 12.20*
€ 15.01
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€ 14.91
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€ 10.86*
€ 13.36
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€ 10.47*
€ 12.88
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€ 9.43*
€ 11.60
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€ 9.77
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