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Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A

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piece

Product information

Item number:
4MD6L-IGT60R190D1SATMA1

Manufacturer:
Infineon

Manufacturer no.:
IGT60R190D1SATMA1

EAN/GTIN:
n/a

Search terms:

Junction FET transistor
Power transistor
MOSFET
MOSFET transistor

Attention!
This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity.

Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-HSOF-8-3
Gate current: 7.7mA
Drain-source voltage: 600V
Drain current: 12.5A
On-state resistance: 0.19Ω
Type of transistor: N-JFET
Power dissipation: 55.5W
Polarisation: unipolar
Kind of package: tape
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10V
Pulsed drain current: 23A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistor, SMD transistors, Transistor, Transistors

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€ 8.36*

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Staggered prices

Order quantity	Net	Gross	Unit

1 piece	€ 8.36*	€ 10.28	per piece
from 2 pieces	€ 8.31*	€ 10.22	per piece
from 3 pieces	€ 7.44*	€ 9.15	per piece
from 5 pieces	€ 7.28*	€ 8.95	per piece
from 10 pieces	€ 6.48*	€ 7.97	per piece
from 20 pieces	€ 6.33*	€ 7.79	per piece
from 3000 pieces	€ 5.35*	€ 6.58	per piece

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