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Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A


Quantity:  piece  
Product information

Item number:
     4MD6L-IGOT60R070D1AUMA1
Manufacturer:
     Infineon
Manufacturer no.:
     IGOT60R070D1AUMA1
EAN/GTIN:
     n/a
Search terms:
Junction FET transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: INFINEON TECHNOLOGIES
Mounting: SMD
Case: PG-DSO-20
Gate current: 20mA
Drain-source voltage: 600V
Drain current: 31A
On-state resistance: 70mΩ
Type of transistor: N-JFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape
Gate charge: 5.8nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhanced
Gate-source voltage: -10V
Pulsed drain current: 60A
Other search terms: SMD transistors, smd transistor
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