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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0


Quantity:  piece  
Product information

Item number:
     4MD6L-GD35PJY120L3S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD35PJY120L3S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: L3.0
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
An overview of the conditions1
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€ 55.93*
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Net
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Unit
1 piece
€ 55.93*
€ 68.79
per piece
from 2 pieces
€ 54.92*
€ 67.55
per piece
from 4 pieces
€ 48.47*
€ 59.62
per piece
from 5 pieces
€ 47.88*
€ 58.89
per piece
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€ 46.74*
€ 57.49
per piece
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€ 42.00*
€ 51.66
per piece
from 20 pieces
€ 39.85*
€ 49.02
per piece
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€ 36.74*
€ 45.19
per piece
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