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Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A


Quantity:  piece  
Product information

Item number:
     4MD6L-GD20PJX65F1S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD20PJX65F1S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: F1.1
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
An overview of the conditions1
Delivery period
Stock level
Price
€ 40.84*
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Staggered prices
Order quantity
Net
Gross
Unit
1 piece
€ 40.84*
€ 50.23
per piece
from 2 pieces
€ 38.70*
€ 47.60
per piece
from 3 pieces
€ 34.28*
€ 42.16
per piece
from 5 pieces
€ 33.42*
€ 41.11
per piece
from 10 pieces
€ 29.78*
€ 36.63
per piece
from 20 pieces
€ 27.74*
€ 34.12
per piece
from 25 pieces
€ 27.50*
€ 33.83
per piece
from 3000 pieces
€ 25.38*
€ 31.22
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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