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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2


Quantity:  piece  
Product information

Item number:
     4MD6L-GD15PJY120L2S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD15PJY120L2S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: L2.2
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
An overview of the conditions1
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In stock In stock
€ 37.92*
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Staggered prices
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Net
Gross
Unit
1 piece
€ 37.92*
€ 46.64
per piece
from 2 pieces
€ 35.86*
€ 44.11
per piece
from 3 pieces
€ 31.75*
€ 39.05
per piece
from 5 pieces
€ 31.11*
€ 38.27
per piece
from 10 pieces
€ 30.72*
€ 37.79
per piece
from 12 pieces
€ 27.61*
€ 33.96
per piece
from 20 pieces
€ 26.34*
€ 32.40
per piece
from 24 pieces
€ 24.49*
€ 30.12
per piece
from 3000 pieces
€ 22.00*
€ 27.06
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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