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Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A


Quantity:  piece  
Product information

Item number:
     4MD6L-GD10PJX65F1S
Manufacturer:
     STARPOWER SEMICONDUCTOR
Manufacturer no.:
     GD10PJX65F1S
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Transistor
Transistors
Manufacturer: STARPOWER SEMICONDUCTOR
Case: F1.1
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: three-phase diode bridge;NTC thermistor;boost chopper;IGBT three-phase bridge OE output
An overview of the conditions1
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€ 35.51*
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Net
Gross
Unit
1 piece
€ 35.51*
€ 43.68
per piece
from 2 pieces
€ 33.81*
€ 41.59
per piece
from 3 pieces
€ 29.91*
€ 36.79
per piece
from 5 pieces
€ 29.08*
€ 35.77
per piece
from 10 pieces
€ 25.80*
€ 31.73
per piece
from 20 pieces
€ 25.09*
€ 30.86
per piece
from 25 pieces
€ 23.43*
€ 28.82
per piece
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€ 20.65*
€ 25.40
per piece
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