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Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V


Quantity:  piece  
Product information

Item number:
     4MD6L-GAN041-650WSBQ
Manufacturer:
     Nexperia
Manufacturer no.:
     GAN041-650WSBQ
EAN/GTIN:
     n/a
Search terms:
Junction FET transistor
Power transistor
Transistor
Transistors
Manufacturer: NEXPERIA
Mounting: THT
Case: TO247;SOT429
Drain-source voltage: 650V
Drain current: 33.4A
On-state resistance: 35mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 187W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: GaN
Kind of transistor: cascode;HEMT
Gate-source voltage: ±20V
Pulsed drain current: 240A
Other search terms: power transistor
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