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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7


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Product information

Item number:
     4MD6L-G2R1000MT17J
Manufacturer:
     Genesic Semiconductor
Manufacturer no.:
     G2R1000MT17J
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: GeneSiC SEMICONDUCTOR
Mounting: SMD
Case: TO263-7
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC;G2R™
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 8A
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