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Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK


Quantity:  piece  
Product information

Item number:
     4MD6L-FQB8P10TM
Manufacturer:
     onsemi
Manufacturer no.:
     FQB8P10TM
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: ONSEMI
Mounting: SMD
Case: D2PAK
Drain-source voltage: -100V
Drain current: -5.7A
On-state resistance: 530mΩ
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -32A
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