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Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W


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Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W
Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W
Item number:
     4MD6L-FQB11P06TM
Manufacturer:
     onsemi
Manufacturer no.:
     FQB11P06TM
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: ONSEMI
Mounting: SMD
Case: D2PAK
Drain-source voltage: -60V
Drain current: -8.05A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -45.6A
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