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Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A


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Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Item number:
     4MD6L-FF200R12KT4
Manufacturer:
     Infineon
Manufacturer no.:
     FF200R12KT4HOSA1
EAN/GTIN:
     n/a
Search terms:
IGBT modules
Power transistor
Gilt moulding pin
Gilt moulding pins
Manufacturer: INFINEON TECHNOLOGIES
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
An overview of the conditions1
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Price
from € 130.93*
  
Price is valid from 500 pieces
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Order quantity
Net
Gross
Unit
1 piece
€ 179.86*
€ 221.23
per piece
from 2 pieces
€ 177.38*
€ 218.18
per piece
from 3 pieces
€ 158.71*
€ 195.21
per piece
from 5 pieces
€ 150.10*
€ 184.62
per piece
from 10 pieces
€ 138.17*
€ 169.95
per piece
from 500 pieces
€ 130.93*
€ 161.04
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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