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Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8


Quantity:  piece  
Product information

Item number:
     4MD6L-FDS6912A
Manufacturer:
     onsemi
Manufacturer no.:
     FDS6912A
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
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