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Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8


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Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Item number:
     4MD6L-FDS6681Z
Manufacturer:
     onsemi
Manufacturer no.:
     FDS6681Z
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 260nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Other search terms: MOSFET transistor, power transistor
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