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Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3


Quantity:  piece  
Product information

Item number:
     4MD6L-FDN358P
Manufacturer:
     onsemi
Manufacturer no.:
     FDN358P
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: logic level
Gate charge: 5.6nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Other search terms: MOSFET transistor
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