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Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3


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Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Item number:
     4MD6L-FDN302P
Manufacturer:
     onsemi
Manufacturer no.:
     FDN302P
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 84mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: logic level
Gate charge: 14nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Other search terms: MOSFET transistor, power transistor
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