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Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8


Quantity:  piece  
Product information

Item number:
     4MD6L-FDMT1D3N08B
Manufacturer:
     onsemi
Manufacturer no.:
     FDMT1D3N08B
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 103A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 178W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 864A
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