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Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W


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Product information

Item number:
     4MD6L-FDMB3800N
Manufacturer:
     onsemi
Manufacturer no.:
     FDMB3800N
EAN/GTIN:
     n/a
Search terms:
Digital transistor
Dual transistor
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: MicroFET
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 61mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9A
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