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Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6


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Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Item number:
     4MD6L-FDC658AP
Manufacturer:
     onsemi
Manufacturer no.:
     FDC658AP
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Other search terms: MOSFET transistor, power transistor
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€ 0.96*
€ 1.18
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from 50 pieces
€ 0.49*
€ 0.60
per piece
from 100 pieces
€ 0.42*
€ 0.52
per piece
from 250 pieces
€ 0.34*
€ 0.42
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from 500 pieces
€ 0.30*
€ 0.37
per piece
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