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Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6


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Product information

Item number:
     4MD6L-FDC6401N
Manufacturer:
     onsemi
Manufacturer no.:
     FDC6401N
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
MOSFET
Manufacturer: ONSEMI
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 3A
On-state resistance: 106mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 4.6nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
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