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Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK


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Product information

Item number:
     4MD6L-FDB120N10
Manufacturer:
     onsemi
Manufacturer no.:
     FDB120N10
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: ONSEMI
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 52A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 86nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 296A
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