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Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN


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Product information

Item number:
     4MD6L-FDA28N50
Manufacturer:
     onsemi
Manufacturer no.:
     FDA28N50
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: ONSEMI
Mounting: THT
Case: TO3PN
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: DMOS;UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
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