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Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W


Quantity:  packet  
Product information

Item number:
     4MD6L-DMN63D8LDW-7
Manufacturer:
     Diodes
Manufacturer no.:
     DMN63D8LDW-7
EAN/GTIN:
     n/a
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
Manufacturer: DIODES INCORPORATED
Mounting: SMD
Case: SOT363
Drain-source voltage: 30V
Drain current: 0.17A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
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from € 0.20*
  
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€ 1.1193
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€ 0.43665
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€ 0.305*
€ 0.37515
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€ 0.285*
€ 0.35055
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€ 0.255*
€ 0.31365
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€ 0.28905
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€ 0.2829
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€ 0.246
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