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Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW


Quantity:  packet  
Product information

Item number:
     4MD6L-DMN2600UFB-7
Manufacturer:
     Diodes
Manufacturer no.:
     DMN2600UFB-7
EAN/GTIN:
     n/a
Search terms:
Power transistor
SMD transistor
SMD transistors
smd transistor
Manufacturer: DIODES INCORPORATED
Mounting: SMD
Case: X1-DFN1006-3
Drain-source voltage: 25V
Drain current: 0.9A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.54W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 0.85nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
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