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Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8


Quantity:  piece  
Product information

Item number:
     4MD6L-DMN2009USS-13
Manufacturer:
     Diodes
Manufacturer no.:
     DMN2009USS-13
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: DIODES INCORPORATED
Mounting: SMD
Case: SO8
Drain-source voltage: 20V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;13 inch reel
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 100A
Other search terms: SMD transistors, Transistor, Transistors
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