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Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W


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Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W
Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W
Item number:
     4MD6L-DMG1013T-7
Manufacturer:
     Diodes
Manufacturer no.:
     DMG1013T-7
EAN/GTIN:
     n/a
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
Manufacturer: DIODES INCORPORATED
Mounting: SMD
Case: SOT523
Drain-source voltage: -20V
Drain current: -0.33A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -6A
Other search terms: power transistor
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