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IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA


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Product information
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Item number:
     4MD6L-DGD2106MS8-13
Manufacturer:
     Diodes
Manufacturer no.:
     DGD2106MS8-13
EAN/GTIN:
     n/a
Search terms:
Diodes
IGBT
SMD transistor
SMD transistors
Manufacturer: DIODES INCORPORATED
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...20V DC
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 220ns
Pulse fall time: 80ns
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: tape;reel
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side;gate driver
Topology: IGBT half-bridge;MOSFET half-bridge
Voltage class: 600V
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