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Transistor: P-MOSFET; unipolar; -30V; -0.33A; 0.17W; SOT23,TO236AB


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Transistor: P-MOSFET; unipolar; -30V; -0.33A; 0.17W; SOT23,TO236AB
Transistor: P-MOSFET; unipolar; -30V; -0.33A; 0.17W; SOT23,TO236AB
Item number:
     4MD6L-BSH202.215
Manufacturer:
     Nexperia
Manufacturer no.:
     BSH202,215
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: -30V
Drain current: -0.33A
On-state resistance: 0.9Ω
Type of transistor: P-MOSFET
Power dissipation: 0.17W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: logic level
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
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