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Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3


Quantity:  piece  
Product information

Item number:
     4MD6L-BGH50N65HS1
Manufacturer:
     BASiC SEMICONDUCTOR
Manufacturer no.:
     BGH50N65HS1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Attention!
This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity.

Manufacturer: BASiC SEMICONDUCTOR
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Type of transistor: IGBT
Power dissipation: 357W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 308nC
Technology: Trench;Field Stop;SiC SBD
An overview of the conditions1
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In stock In stock
€ 14.27*
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1 piece
€ 14.27*
€ 17.55
per piece
from 2 pieces
€ 14.08*
€ 17.32
per piece
from 5 pieces
€ 12.01*
€ 14.77
per piece
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€ 11.76*
€ 14.46
per piece
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€ 11.60*
€ 14.27
per piece
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€ 10.26*
€ 12.62
per piece
from 150 pieces
€ 9.03*
€ 11.11
per piece
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€ 7.66*
€ 9.42
per piece
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