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Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3


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Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Item number:
     4MD6L-BGH50N65HS1
Manufacturer:
     BASiC SEMICONDUCTOR
Manufacturer no.:
     BGH50N65HS1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: BASiC SEMICONDUCTOR
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Type of transistor: IGBT
Power dissipation: 357W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 308nC
Technology: Trench;Field Stop;SiC SBD
Other search terms: power transistor
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