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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W

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piece

Product information

Item number:
4MD6L-B2M065120Z

Manufacturer:
BASiC SEMICONDUCTOR

Manufacturer no.:
B2M065120Z

EAN/GTIN:
n/a

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Power transistor
MOSFET
MOSFET transistor
Transistor

Manufacturer: BASiC SEMICONDUCTOR
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 85A

... > Unipolar transistors > N channel transistors > THT N channel transistors

Other search terms: Transistors

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€ 11.18*

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Order quantity	Net	Gross	Unit

1 piece	€ 11.18*	€ 13.75	per piece
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from 20 pieces	€ 8.05*	€ 9.90	per piece
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