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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W


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Product information

Item number:
     4MD6L-B2M032120Y
Manufacturer:
     BASiC SEMICONDUCTOR
Manufacturer no.:
     B2M032120Y
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: BASiC SEMICONDUCTOR
Mounting: THT
Case: TO247PLUS-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 40nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Other search terms: Transistors, power transistor
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