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Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W


Quantity:  piece  
Product information

Item number:
     4MD6L-APTCV60HM45RCT3G
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     APTCV60HM45RCT3G
EAN/GTIN:
     n/a
Search terms:
Diode module
IGBT modules
Power transistor
diode module
Manufacturer: MICROCHIP (MICROSEMI)
Case: SP3F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 50A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET/IGBT transistor
Technology: SiC;CoolMOS™;Trench;Field Stop
Gate-source voltage: ±20V
Topology: NTC thermistor;H-bridge;single-phase diode bridge
Pulsed drain current: 130A
An overview of the conditions1
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Price
from € 106.95*
  
Price is valid from 500 pieces
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Net
Gross
Unit
1 piece
€ 156.35*
€ 192.31
per piece
from 2 pieces
€ 155.29*
€ 191.01
per piece
from 3 pieces
€ 139.01*
€ 170.98
per piece
from 5 pieces
€ 130.00*
€ 159.90
per piece
from 10 pieces
€ 113.73*
€ 139.89
per piece
from 500 pieces
€ 106.95*
€ 131.55
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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