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Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW


Quantity:  piece  
Product information

Item number:
     4MD6L-APT31M100B2
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     APT31M100B2
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: MICROCHIP (MICROSEMI)
Mounting: THT
Case: TO247MAX
Drain-source voltage: 1kV
Drain current: 20A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Other search terms: Transistors, power transistor
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