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Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3


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Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Item number:
     4MD6L-APT30N60BC6
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     APT30N60BC6
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: MICROCHIP (MICROSEMI)
Mounting: THT
Case: TO247-3
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 219W
Polarisation: unipolar
Gate charge: 88nC
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 89A
Other search terms: Transistors, power transistor
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