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Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3


Quantity:  piece  
Product information

Item number:
     4MD6L-APT25GP120BDQ1G
Manufacturer:
     Microchip Technology
Manufacturer no.:
     APT25GP120BDQ1G
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: MICROCHIP TECHNOLOGY
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 33A
Pulsed collector current: 90A
Turn-on time: 26ns
Turn-off time: 200ns
Type of transistor: IGBT
Power dissipation: 417W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
Technology: POWER MOS 7®;PT
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€ 15.24*
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